| US 7,566,904 B2 | ||
| Thin film transistor having oxide semiconductor layer and manufacturing method thereof | ||
| Hiromitsu Ishii, Mitaka (Japan) | ||
| Assigned to Casio Computer Co., Ltd., Tokyo (Japan) | ||
| Filed on Jun. 07, 2006, as Appl. No. 11/448,633. | ||
| Claims priority of application No. 2005-170348 (JP), filed on Jun. 10, 2005. | ||
| Prior Publication US 2006/0284172 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 31/00 (2006.01) | ||
| U.S. Cl. 257—59 [257/E31.041; 257/E27.1; 257/E27.116; 257/E29.117; 257/E29.137; 257/E29.202; 257/E29.273; 257/E29.314; 257/E29.32; 257/E21.372; 257/E21.411; 257/E21.533; 257/E21.535; 257/E27.131; 257/E27.132; 257/72; 257/60; 257/411; 349/42; 349/43; 349/46] | 18 Claims |
| 2. A thin film transistor, comprising:
a semiconductor thin film including zinc oxide;
a protection film formed on an entire upper surface of the semiconductor thin film and having a plan-view shape that is substantially
the same as a plan-view shape of the semiconductor thin film;
a gate insulating film formed on the protection film;
a gate electrode formed on the gate insulating film above the semiconductor thin film;
a source electrode and a drain electrode formed under the semiconductor thin film so as to be electrically connected to the
semiconductor thin film; and
ohmic contact layers made of n type zinc oxide which are respectively provided on upper surfaces of the source electrode and
the drain electrode under the semiconductor thin film,
wherein end surfaces of the ohmic contact layers, which face each other, protrude from end surfaces of the source electrode
and the drain electrode that face each other.
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