| US 7,563,636 B2 | ||
| Method of forming a pixel sensor cell for collecting electrons and holes | ||
| James W. Adkisson, Jericho, Vt. (US); Andres Bryant, Burlington, Vt. (US); John J. Ellis-Monaghan, Grand Isle, Vt. (US); Mark D. Jaffe, Shelburne, Vt. (US); Jeffrey B. Johnson, Essex Junction, Vt. (US); and Alain Loiseau, Williston, Vt. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jul. 14, 2008, as Appl. No. 12/172,304. | ||
| Application 12/172304 is a division of application No. 11/161535, filed on Aug. 08, 2005, granted, now 7,439,561. | ||
| Prior Publication US 2008/0274578 A1, Nov. 06, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—57 [257/233; 257/292; 257/E27.131; 257/E27.132; 257/E31.038] | 13 Claims |
| 1. A method of forming a pixel sensor cell comprising:
providing a substrate;
forming an n-type collection well region in said substrate for collecting electrons generated by electromagnetic radiation
impinging on said pixel sensor cell;
forming an n-type diffusion region in direct physical contact with said n-type collection well region;
forming a p-type collection well region in said substrate for collecting holes generated by said impinging electromagnetic
radiation;
forming a p-type diffusion region in direct physical contact with said p-type collection well region; and
forming a circuit structure having a first input coupled to said n-type collection well region and a second input coupled
to said p-type collection well region, wherein an output signal of said pixel sensor cell being the magnitude of the difference
of a signal of said first input and a signal of said second input.
|