| US 7,563,560 B1 | ||
| Solution and method for manufacturing an integrated circuit | ||
| Adam R. Pawloski, San Jose, Calif. (US); and Harry J. Levinson, Saratoga, Calif. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US) | ||
| Filed on Feb. 01, 2005, as Appl. No. 11/47,840. | ||
| Int. Cl. G03F 7/26 (2006.01) | ||
| U.S. Cl. 430—311 [430/322] | 21 Claims |
| 1. A method for manufacturing an integrated circuit, comprising:
providing a substrate;
forming a layer of photoresist on the substrate;
treating the layer of photoresist with a polyelectrolyte solution; and
exposing at least one portion of the layer of photoresist treated with the polyelectrolyte solution to radiation via immersion
lithography;
wherein treating the layer of photoresist with the polyelectrolyte solution causes a polyelectrolyte to be adsorbed to the
layer of photoresist so as to increase wettability of the layer of photoresist.
|