| US 7,563,514 B2 | ||
| Transparent conductive film and transparent conductive base material utilizing the same | ||
| Tokuyuki Nakayama, Ichikawa (Japan); and Yoshiyuki Abe, Ichikawa (Japan) | ||
| Assigned to Sumitomo Metal Mining Co., Ltd., Tokyo (Japan) | ||
| Appl. No. 10/575,471 PCT Filed Dec. 28, 2004, PCT No. PCT/JP2004/019595 § 371(c)(1), (2), (4) Date Apr. 12, 2006, PCT Pub. No. WO2005/083722, PCT Pub. Date Sep. 09, 2005. |
||
| Claims priority of application No. 2004-054816 (JP), filed on Feb. 27, 2004; and application No. 2004-363269 (JP), filed on Dec. 15, 2004. | ||
| Prior Publication US 2007/0051926 A1, Mar. 08, 2007 | ||
| Int. Cl. B32B 9/00 (2006.01) | ||
| U.S. Cl. 428—432 [428/426; 428/698; 428/701; 428/702] | 10 Claims |
| 1. A transparent conductive film comprising laminated transparent conductive thin films of at least two layers, wherein
a transparent conductive thin film of an uppermost layer is an amorphous oxide thin film composed of gallium, indium, and
oxygen, with a gallium content ranging from 49.1 atom % to 65 atom % with respect to all metallic atoms,
wherein a transparent conductive thin film other than the transparent conductive thin film of the uppermost layer includes
at least one of an amorphous oxide thin film composed of: indium, tin, and oxygen; an amorphous oxide thin film composed of
indium, zinc and oxygen; an amorphous oxide thin film composed of indium, tungsten, and oxygen; and an amorphous oxide thin
film composed of indium, tungsten, zinc and oxygen, and
wherein a work function is 5.1 eV or more, and a surface resistance is 100 Ω/□ or less.
|