| US 7,548,480 B2 | ||
| Circuit and method for supplying power to sense amplifier in semiconductor memory apparatus | ||
| Bong-Hwa Jeong, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Hynix Semiconductor Inc., Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 29, 2006, as Appl. No. 11/647,477. | ||
| Claims priority of application No. 10-2006-0012357 (KR), filed on Feb. 09, 2006. | ||
| Prior Publication US 2007/0183236 A1, Aug. 09, 2007 | ||
| Int. Cl. G11C 5/14 (2006.01); G11C 7/00 (2006.01) | ||
| U.S. Cl. 365—226 [365/227; 365/222; 365/205; 365/207; 365/208; 365/194] | 11 Claims |
| 1. A circuit for supplying power to a sense amplifier in a semiconductor memory apparatus, comprising:
a compensation controlling unit configured to generate a compensation control signal to determine power compensation, in response
to a refresh signal;
a compensation voltage input node which is applied with a first voltage;
a power compensating unit configured to selectively supply the compensation voltage input node with a second voltage in response
to the compensation control signal; and
a power supply unit configured to supply a voltage at the compensation voltage input node or the second voltage to a sense-amp
driver in response to a first power control signal or a second power control signal, wherein the power supply unit comprises:
an output terminal;
a first transistor having a gate terminal configured to receive the first power control signal, a drain terminal configured
to receive the second voltage, and a source terminal coupled with the output terminal; and
a second transistor having a gate terminal configured to receive the second power control signal, a drain terminal coupled
to the compensation voltage input node, and a source terminal coupled with the output terminal.
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