| US 7,548,466 B2 | ||
| Flash memory device and voltage generating circuit for the same | ||
| Sang-Kug Park, Bucheon-si (Korea, Republic of); and Dae-Han Kim, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Sep. 15, 2006, as Appl. No. 11/521,479. | ||
| Claims priority of application No. 10-2005-0095028 (KR), filed on Oct. 10, 2005. | ||
| Prior Publication US 2007/0081392 A1, Apr. 12, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 5/14 (2006.01) | ||
| U.S. Cl. 365—189.09 [365/226; 365/229] | 17 Claims |
| 1. A flash memory device comprising:
a memory cell array including a plurality of memory cells; and
a voltage generating circuit which generates a plurality of constant voltages to be applied to the memory cell array, the
voltage generating circuit including a plurality of voltage regulators which generate at least two constant voltages, each
having a constant voltage difference,
wherein each of the voltage regulators generates a first constant voltage during a standby period and generates a first voltage
and a second voltage having a constant voltage difference relative to the first voltage during an active period.
|