| US 7,547,957 B2 | ||
| Thin film capacitors and methods of making the same | ||
| Cengiz A. Palanduz, Chandler, Ariz. (US) | ||
| Assigned to Intel Corporation, Santa Clara, Calif. (US) | ||
| Filed on Oct. 30, 2007, as Appl. No. 11/929,788. | ||
| Application 11/929788 is a continuation of application No. 11/172544, filed on Jun. 29, 2005, granted, now 7,453,144. | ||
| Prior Publication US 2008/0054403 A1, Mar. 06, 2008 | ||
| Int. Cl. H01L 39/00 (2006.01) | ||
| U.S. Cl. 257—532 [257/700; 257/703; 257/E23.009] | 12 Claims |
| 1. An apparatus comprising:
a capacitor structure having four layers, the four layers comprising:
a first electrode;
a second electrode;
a first ceramic material disposed between the first electrode and the second electrode; and
a second ceramic material disposed between the first ceramic material and at least one of the first electrode and the second
electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material and comprising
a compound of the general formula La1-xSrxMnO3-δ wherein the electrical conductivity of La1-xSrxMnO3-δ changes from less than one sieman per centimeter to above 1000 siemans per centimeter at room temperature when x changes
from 0 to 0.4.
|