US 7,547,955 B2
Semiconductor imaging device and method for manufacturing the same
Masanori Minamio, Osaka (Japan); Tomoko Komatsu, Kyoto (Japan); and Toshiyuki Fukuda, Kyoto (Japan)
Assigned to Panasonic Corporation, Osaka (Japan)
Filed on Jan. 31, 2007, as Appl. No. 11/700,124.
Claims priority of application No. 2006-090433 (JP), filed on Mar. 29, 2006.
Prior Publication US 2007/0228502 A1, Oct. 04, 2007
Int. Cl. H01L 27/15 (2006.01)
U.S. Cl. 257—432  [257/433; 257/434; 257/680; 257/E31.117; 257/E31.127] 7 Claims
OG exemplary drawing
 
1. A semiconductor imaging device comprising:
a semiconductor imaging element including an imaging region, a peripheral circuit region, and an electrode region, the imaging region including a plurality of micro lenses;
a semiconductor package in which a cavity for mounting the semiconductor imaging element is formed, the semiconductor package including a plurality of internal connection terminals formed inside the periphery of the cavity for being connected with a plurality of electrode terminals of the semiconductor imaging element and a plurality of external connection terminals connected with the internal connection terminals for being connected with an external instrument;
a fixing member for fixing the semiconductor imaging element to the cavity; and
an optical member fixed to the semiconductor package by a sealing member so as to cover the semiconductor imaging element arranged in the cavity,
wherein in the semiconductor imaging element, a semiconductor substrate and the imaging region are flat, the plurality of micro lenses have the same outer dimension, and a face obtained by connecting vertexes of the micro lenses is formed into a continuous concave curve where a micro lens at the center of the imaging region has the smallest curvature while micro lenses at the outermost periphery thereof have the largest curvature and thickness at vertexes of the micro lenses increases continuously from the micro lens at the center to the micro lenses at the outermost periphery.