| US 7,547,913 B2 | ||
| Phase-change memory device using Sb-Se metal alloy and method of fabricating the same | ||
| Sung Min Yoon, Daejeon (Korea, Republic of); Nam Yeal Lee, Daejeon (Korea, Republic of); Sang Ouk Ryu, Daejeon (Korea, Republic of); Seung Yun Lee, Daejeon (Korea, Republic of); Young Sam Park, Daejeon (Korea, Republic of); Kyu Jeong Choi, Daejeon (Korea, Republic of); and Byoung Gon Yu, Daejeon (Korea, Republic of) | ||
| Assigned to Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of) | ||
| Appl. No. 12/63,991 PCT Filed Aug. 30, 2006, PCT No. PCT/KR2006/003416 § 371(c)(1), (2), (4) Date Mar. 07, 2008, PCT Pub. No. WO2007/029938, PCT Pub. Date Mar. 15, 2007. |
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| Claims priority of application No. 10-2005-0083420 (KR), filed on Sep. 07, 2005. | ||
| Prior Publication US 2008/0237564 A1, Oct. 02, 2008 | ||
| Int. Cl. H01L 29/08 (2006.01) | ||
| U.S. Cl. 257—42 [257/E21.068; 257/E21.075; 438/102] | 15 Claims |
| 1. A phase-change memory device comprising:
a heat-generating electrode layer;
a first insulating layer partially covering the heat-generating electrode layer, exposing a portion of the heat-generating
electrode layer, and having a pore therein; and
an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting the portion of the heat-generating electrode layer exposed through the pore, and filling
the pore.
|