	US 7,547,909 B2
	III-nitride compound semiconductor light emitting device
Joongseo Park, Kyunggi-do (Korea, Republic of)
Assigned to Epivalley Co., Ltd., Koomi (Korea, Republic of)
Appl. No. 10/597,607 PCT Filed Mar. 05, 2005, PCT No. PCT/KR2005/000360 § 371(c)(1), (2), (4) Date Aug. 01, 2006, PCT Pub. No. WO2005/076374, PCT Pub. Date Aug. 18, 2005.
Claims priority of application No. 10-2004-0007541 (KR), filed on Feb. 05, 2004.
Prior Publication US 2008/0149917 A1, Jun. 26, 2008
Int. Cl. H01L 29/06 (2006.01); H01L 31/072 (2006.01)

U.S. Cl. 257—14 [257/15; 257/79; 257/98; 257/99; 257/E33.068; 257/E33.008; 257/E21.108; 257/E21.172]

4 Claims

1. A III-nitride compound semiconductor light emitting device comprising an active layer with the multi-quantum wells interposed between an n-In_xAl_yGa_zN (x+y+z=1, 0≤x<1, 0≤y<1, 0<z≤1)layer and a p-In_xAl_yGa_zN(x+y+z=1, 0≤x<1, 0≤y<1, 0<z≤1) layer, wherein the active layer comprises an alternate stacking of a quantum-well layer made of In_xGa_1-xN(0.05<x<1) and a sandwich barrier layer, the sandwich barrier layer comprising a first outer barrier layer of In_aGa_1-aN(0<a≤0.05), a middle barrier layer of Al_yGa_1-yN(0≤y<1) formed on the first outer barrier layer and a second outer barrier layer of In_bGa_1-bN(0<b≤0.05) formed on the middle barrier layer, and wherein the middle barrier layer has a bandgap energy greater than those of the first and second outer barrier layers.