| US 7,547,632 B2 | ||
| Methods of forming metal layers in the fabrication of semiconductor devices | ||
| Jung-Hun Seo, Gyeonggi-do (Korea, Republic of); Gil-Heyun Choi, Gyeonggi-do (Korea, Republic of); Jong-Myeong Lee, Gyeonggi-do (Korea, Republic of); and Hee-Sook Park, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on Feb. 15, 2007, as Appl. No. 11/675,158. | ||
| Application 11/675158 is a division of application No. 10/812768, filed on Mar. 30, 2004, abandoned. | ||
| Claims priority of application No. 2003-45786 (KR), filed on Jul. 07, 2003. | ||
| Prior Publication US 2007/0134932 A1, Jun. 14, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—681 [257/E21.586; 438/685] | 19 Claims |
| 1. A method of forming metal layers on a semiconductor substrate comprising:
forming a barrier metal layer on a semiconductor substrate in a first processing chamber using a metal organic chemical vapor
deposition (MOCVD) method;
flushing the barrier metal using at least one gas selected from the group consisting of gases containing a halogen group element
and gases containing a halogen group element and a transitional metal; and
forming an upper metal layer on the barrier metal layer in the second processing chamber, wherein the barrier metal layer
is isolated from an oxygen atmosphere until the step of forming the upper metal layer to reduce oxygen contamination of the
barrier metal layer.
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