| US 7,547,610 B2 | ||
| Method of making a semiconductor device comprising isolation trenches inducing different types of strain | ||
| Christoph Schwan, Gebhardshain (Germany); Joe Bloomquist, Austin, Tex. (US); Peter Javorka, Dresden (Germany); Manfred Horstmann, Duerroehrsdorf-Dittersbach (Germany); Sven Beyer, Dresden (Germany); Markus Forsberg, Dresden (Germany); Frank Wirbeleit, Dresden (Germany); and Karla Romero, Dresden (Germany) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Apr. 12, 2007, as Appl. No. 11/734,320. | ||
| Claims priority of application No. 10 2006 046 377 (DE), filed on Sep. 29, 2006. | ||
| Prior Publication US 2008/0079085 A1, Apr. 03, 2008 | ||
| Int. Cl. H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—427 [438/424; 438/425; 438/429; 438/E21.546] | 12 Claims |
| 1. A method, comprising:
forming a first isolation trench in a semiconductor layer;
filling said first isolation trench with a first dielectric fill material having a first type of intrinsic stress, wherein
said first type of intrinsic stress is one of a tensile type stress and a compressive type stress;
forming a second isolation trench in said semiconductor layer, wherein said first isolation trench is formed and filled prior
to forming said second isolation trench; and
filling said second isolation trench with a second dielectric fill material having a second type of intrinsic stress, wherein
said second type of intrinsic stress is of an opposite type from said first type of intrinsic stress.
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