| US 7,547,579 B1 | ||
| Underfill process | ||
| Tongbi Jiang, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Apr. 06, 2000, as Appl. No. 9/544,822. | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—118 [438/119; 438/406; 438/455; 438/456; 438/457; 438/458; 438/459; 438/615; 438/616; 438/617] | 38 Claims |
| 1. A method for applying a material between a semiconductor device having a surface and a substrate having a surface, said
method comprising:
applying a liquid wetting agent layer to one of said surface of said semiconductor device and said surface of said substrate;
and
applying a flowable underfill material between the substrate and the semiconductor device, such that said flowable material
contacts said liquid wetting agent layer.
|