| US 7,547,574 B2 | ||
| Organic thin film transistor(s) and method(s) for fabricating the same | ||
| Hyun Jung Park, Seoul (Korea, Republic of); Sang Yoon Lee, Seoul (Korea, Republic of); Eun Jeong Jeong, Seongnam-si (Korea, Republic of); Kook Min Han, Suwon-si (Korea, Republic of); Jung Seok Hahn, Seongnam-si (Korea, Republic of); and Tae Woo Lee, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics, Co., Ltd., Gyeonggi-Do (Korea, Republic of) | ||
| Filed on Dec. 09, 2005, as Appl. No. 11/297,396. | ||
| Claims priority of application No. 10-2005-0056196 (KR), filed on Jun. 28, 2005. | ||
| Prior Publication US 2006/0289858 A1, Dec. 28, 2006 | ||
| Int. Cl. H01L 51/40 (2006.01) | ||
| U.S. Cl. 438—99 [438/151; 257/40; 257/66] | 26 Claims |
| 1. A method for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer,
metal oxide source/drain electrodes and an organic semiconductor layer, the method comprising:
treating at least one surface of the metal oxide source/drain electrodes with a self-assembled monolayer (SAM) forming compound
containing a sulfonic acid group, wherein the self-assembled monolayer forming compound containing a sulfonic acid group is
represented by any one of Formulae 4 to 7 below:
 wherein q is an integer from 1 to about 10,000, and x and y are each independently an integer from 0 to about 10;
 wherein r and s are integers satisfying the relations 0<r≤10,000 and 0≤s<10,000, respectively, and w and z are each independently
an integer from 0 to about 20;
 wherein t and u are integers satisfying the relations 0<t≤10,000 and 0≤u<10,000, respectively, and v and c are each independently
an integer of from 0 to about 20;
 wherein d and e are integers satisfying the relations 0<d≤10,000 and 0≤e<10,000, respectively, and
wherein f is an integer from 0 to about 20.
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