| US 7,529,631 B2 | ||
| Defect detection system, defect detection method, and defect detection program | ||
| Hiroshi Matsushita, Hiratsuka (Japan); Yasutaka Arakawa, Yokohama (Japan); and Junji Sugamoto, Oita (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 19, 2007, as Appl. No. 11/812,398. | ||
| Claims priority of application No. 2006-170677 (JP), filed on Jun. 20, 2006. | ||
| Prior Publication US 2008/0004823 A1, Jan. 03, 2008 | ||
| Int. Cl. G01B 5/30 (2006.01) | ||
| U.S. Cl. 702—35 [702/82] | 19 Claims |

| 1. A defect detection system comprising:
a data acquiring section that acquires time series data of a device parameter of each of a plurality of manufacturing devices
including an exposure device, and information on defect distribution in an area with a size smaller than a size of each of
a plurality of chip areas arranged on a wafer processed in each of the plurality of manufacturing devices;
a pattern classifying section that assembles the information on the defect distribution in units of shot areas of the exposure
device or in units of chip areas, and classifies the assembled defect distributions to a defect pattern;
a feature quantity calculating section that statistically processes the time series data and calculates a feature quantity;
a significant difference test section that calculates an occurrence frequency distribution of the feature quantity in units
of the shot area or the chip area in which the defect pattern exists and an occurrence frequency distribution of the feature
quantity in units of the shot area or the chip area in which the defect pattern does not exist, and determines the presence
or absence of a significant difference between the frequency distributions, the significant difference being determined to
exist when a significant difference test value is smaller than a test reference value and determined not to exist when the
significant difference test value is larger than the test reference value; and
a defect detecting section that detects the device parameter corresponding to the feature quantity as the cause of defect
of the defect pattern when the significant difference is determined to exist.
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