| US 7,529,283 B2 | ||
| Nitride semiconductor laser device and method for fabrication thereof | ||
| Takeshi Kamikawa, Mihara (Japan); and Yoshika Kaneko, Funabashi (Japan) | ||
| Assigned to Sharp Kabushiki Kaisha, Osaka (Japan) | ||
| Filed on Oct. 23, 2007, as Appl. No. 11/877,551. | ||
| Application 11/877551 is a continuation of application No. 11/022892, filed on Dec. 28, 2004, abandoned. | ||
| Claims priority of application No. 2004-000328 (JP), filed on Jan. 05, 2004. | ||
| Prior Publication US 2008/0080578 A1, Apr. 03, 2008 | ||
| Int. Cl. H01S 5/00 (2006.01); H01L 33/00 (2006.01) | ||
| U.S. Cl. 372—43.01 [257/79; 257/94; 257/97] | 7 Claims |
| 1. A nitride semiconductor light-emitting device, comprising:
a nitride semiconductor substrate having a surface comprising a nitride semiconductor; and
a nitride film semiconductor growth layer formed on the surface of the nitride semiconductor substrate,
wherein a carved region that is a depressed portion having an inverted tapered shape in cross section is formed on the surface
of the nitride semiconductor substrate,
the nitride film semiconductor growth layer comprises a contact layer that makes contact with the surface of the nitride semiconductor
substrate, the contact layer comprising a GaN film or an aluminum containing GaN film, and
the nitride film semiconductor growth layer comprises a laser stripe configured to function as a light-emitting portion, the
laser stripe being formed 20 μm or more away from the carved region.
|