| US 7,528,550 B2 | ||
| Ion implantation system and control method | ||
| Thomas N. Horsky, Boxborough, Mass. (US); Brian C. Cohen, San Clemente, Calif. (US); Wade A. Krull, Marblehead, Mass. (US); and George P. Sacco, Jr., Wakefield, Mass. (US) | ||
| Assigned to SemEquip, Inc., Billerica, Mass. (US) | ||
| Filed on Dec. 29, 2006, as Appl. No. 11/648,282. | ||
| Application 11/648282 is a continuation of application No. 11/365719, filed on Mar. 01, 2006. | ||
| Application 11/365719 is a continuation of application No. 10/433493, granted, now 7,064,491, previously published as PCT/US2001/18822, filed on Jun. 12, 2001. | ||
| Application 10/433493 is a continuation of application No. PCT/US2000/33786, filed on Dec. 13, 2000. | ||
| Application PCT/US2000/33786 is a continuation in part of application No. 09/736097, filed on Dec. 13, 2000, granted, now 6,452,338. | ||
| Claims priority of provisional application 60/267260, filed on Feb. 07, 2001. | ||
| Claims priority of provisional application 60/257322, filed on Dec. 19, 2000. | ||
| Claims priority of provisional application 60/250080, filed on Nov. 30, 2000. | ||
| Prior Publication US 2007/0176115 A1, Aug. 02, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01J 27/00 (2006.01) | ||
| U.S. Cl. 315—111.81 [315/111.91; 250/423 R; 250/427] | 36 Claims |
| 1. A method of ion implantation by producing a high brightness ion beam that extends along an axis by ionizing molecules of
a gas or vapor, the molecules containing an implantable species, the method comprising:
providing an ionization chamber having a restricted outlet aperture,
providing in said ionization chamber said gas or vapor at a pressure substantially higher than the pressure within an extraction
region into which the ions are to be extracted external to the ionization chamber,
ionizing the gas or vapor in said ionization chamber by way of an electron source outside of said ionization chamber,
extracting ions formed within the ionization chamber via the outlet aperture into the extraction region downstream of the
aperture,
transporting the beam to a target surface, and
implanting the ions of the transported ion beam into the target.
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