| US 7,528,450 B2 | ||
| Semiconductor device having NMOSFET and PMOSFET and manufacturing method therefor | ||
| Tomonori Aoyama, Kanagawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Aug. 16, 2007, as Appl. No. 11/889,766. | ||
| Application 11/889766 is a division of application No. 11/016923, filed on Dec. 21, 2004, granted, now 7,265,428. | ||
| Claims priority of application No. 2004-071138 (JP), filed on Mar. 12, 2004. | ||
| Prior Publication US 2008/0054365 A1, Mar. 06, 2008 | ||
| Int. Cl. H01L 29/78 (2006.01) | ||
| U.S. Cl. 257—369 [257/371; 257/377; 257/384; 257/388; 257/412; 257/413] | 8 Claims |
| 1. A semiconductor device comprising:
a silicon substrate; and
a CMOSFET formed on said silicon substrate and made up of an NMOSFET and a PMOSFET;
wherein a gate dielectric film of said NMOSFET and a gate dielectric film of said PMOSFET each have a laminated structure
including a first insulating film and a second insulating film, said first insulating film being formed on said silicon substrate,
said second insulating film being formed on said first insulating film;
wherein a gate electrode of said NMOSFET includes an n-type silicon film and a first metal silicide film, said n-type silicon
film being formed on said gate dielectric film of said NMOSFET, said first metal silicide film being formed on said n-type
silicon film;
wherein a gate electrode of said PMOSFET has a laminated structure including a metal film and a second metal silicide film,
said metal film being formed on said gate dielectric film of said PMOSFET, said second metal silicide film being formed on
said metal film, a material of said metal film being different from a material of said n-type silicon film; and
wherein said second insulating film is a high dielectric constant insulating film and is not formed on sidewalls of said gate
electrodes of said NMOSFET and said PMOSFET.
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