US 7,528,393 B2
Charged particle beam processing apparatus
Kiminobu Akeno, Yokohama (Japan)
Assigned to Kabushiki Kaisha Toshiba, Minato-ku, Tokyo (Japan)
Filed on Sep. 26, 2005, as Appl. No. 11/235,411.
Claims priority of application No. 2004-280742 (JP), filed on Sep. 27, 2004.
Prior Publication US 2006/0076514 A1, Apr. 13, 2006
Int. Cl. A61N 5/00 (2006.01)
U.S. Cl. 250—492.22  [250/491.1; 250/492.2; 250/398; 250/400; 355/53; 355/55] 8 Claims
OG exemplary drawing
 
1. A charged particle beam processing apparatus comprising:
a sample chamber configured to process a substrate including a plurality of side faces by a charged particle beam;
a movable stage provided in the sample chamber, the movable stage including a place on which the substrate is to be mounted;
a height and position acquiring unit configured to acquire a height of the substrate on the movable stage by irradiating a laser beam onto the substrate mounted on the movable stage while moving the movable stage on which the substrate is mounted and using the laser beam reflected from the substrate and configured to acquire positions of at least two adjacent side faces among the plurality of side faces of the substrate mounted on the movable stage based on the acquired height of the substrate;
a calculating unit configured to calculate a position of center of gravity of the substrate mounted on the movable stage and a rotation angle as to a rotary axis vertical to the place on which the substrate is to be mounted based on the positions of the at least two adjacent side faces; and
a correcting unit configured to correct the position of center of gravity of the substrate on the movable stage and the rotation angle based on the position of center of gravity and the rotation angle calculated by the calculating unit,
wherein the correcting unit corrects the position of center of gravity and the rotation angle on the substrate outside the sample chamber.