| US 7,527,984 B2 | ||
| Semiconductor device | ||
| Koji Yamakawa, Tokyo (Japan); and Soichi Yamazaki, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jul. 10, 2006, as Appl. No. 11/482,909. | ||
| Claims priority of application No. 2005-293440 (JP), filed on Oct. 06, 2005. | ||
| Prior Publication US 2007/0080383 A1, Apr. 12, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—3 [438/381; 257/295; 257/E27.048] | 15 Claims |
| 1. A semiconductor device comprising:
a semiconductor substrate;
a ferroelectric capacitor arranged above the semiconductor substrate;
an insulating protecting film covering a side surface of the ferroelectric capacitor; and
a side wall film formed only on a side surface of the ferroelectric capacitor through the protecting film and giving tensile
stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor, wherein
the side wall film has intrinsic compression stress.
|