US 7,527,982 B1
Manufacturing method of a semiconductor device including a crystalline insulation film made of perovskite type oxide
Osamu Arisumi, Yokohama (Japan)
Assigned to Kabushiki Kaisha Toshiba, Kawasaki-shi (Japan)
Filed on Jul. 14, 2000, as Appl. No. 9/617,138.
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—3  [257/761; 257/E21.01] 14 Claims
OG exemplary drawing
 
1. A semiconductor device manufacturing method, comprising a process for forming a crystalline insulation film made of an ABO3 perovskite type oxide dielectric on a ground film, a process for forming an amorphous film, which is to be the crystalline insulation film, on the ground film and a process for forming the crystalline insulation film by crystallizing the amorphous film at least from the upper surface side thereof,
wherein the composing ratio of the B-site atom of the amorphous film is set selectively so that the temperature, at which the crystallization of the amorphous film starts, is set to decrease gradually from the central portion of the amorphous film towards the upper surface side and an interface between the amorphous film and the ground film.