| US 7,527,918 B2 | ||
| Pattern forming method and method for manufacturing a semiconductor device | ||
| Takehiro Kondoh, Yokohama (Japan); Eishi Shiobara, Yokohama (Japan); Tomoyuki Takeishi, Kawasaki (Japan); Kenji Chiba, Tokyo (Japan); and Shinichi Ito, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Nov. 19, 2004, as Appl. No. 10/992,349. | ||
| Claims priority of application No. 2003-393038 (JP), filed on Nov. 21, 2003. | ||
| Prior Publication US 2005/0130068 A1, Jun. 16, 2005 | ||
| Int. Cl. G03F 7/00 (2006.01) | ||
| U.S. Cl. 430—312 [430/313; 430/394; 430/5; 430/30; 430/323] | 6 Claims |
| 1. A pattern forming method comprising:
forming a first resist pattern on a substrate, the first resist pattern comprising a plurality of regions, the plurality of
regions each including a plurality of first patterns which are arranged at a constant pitch, wherein the pitch of the plurality
of first patterns differs for each of the plurality of regions;
irradiating each of the plurality of regions with light or energy beams;
forming a resist film including a cross-linking material on the substrate and the first resist pattern; and
forming a second resist pattern including a plurality of second patterns corresponding to the plurality of first patterns,
each of the plurality of second patterns including a cross-linking layer formed at an interface between the first resist pattern
and the resist film by causing a cross-linking reaction at the interlace of the first resist pattern and the resist film,
wherein irradiating each of the plurality of regions with light or energy beams includes setting an amount of light or energy
beams for each of the plurality of regions such that each of dimensions of the plurality of second patterns is to be a predetermined
dimension based on a previously prepared relationship between shrink amounts of dimensions of the plurality of second patterns
with respect to dimensions of the plurality of first patterns and amounts of light or energy beams irradiated on the plurality
of first patterns.
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