| US 7,521,292 B2 | ||
| Stretchable form of single crystal silicon for high performance electronics on rubber substrates | ||
| John A. Rogers, Champaign, Ill. (US); Dahl-Young Khang, Urbana, Ill. (US); and Yugang Sun, Champaign, Ill. (US) | ||
| Assigned to The Board of Trustees of the University of Illinois, Urbana, Ill. (US) | ||
| Filed on Jun. 09, 2006, as Appl. No. 11/423,287. | ||
| Application 11/423287 is a continuation in part of application No. 11/145542, filed on Jun. 02, 2005. | ||
| Application 11/145542 is a continuation in part of application No. 11/145574, filed on Jun. 02, 2005. | ||
| Claims priority of provisional application 60/790104, filed on Apr. 07, 2006. | ||
| Claims priority of provisional application 60/677617, filed on May 04, 2005. | ||
| Claims priority of provisional application 60/663391, filed on Mar. 18, 2005. | ||
| Claims priority of provisional application 60/650305, filed on Feb. 04, 2005. | ||
| Claims priority of provisional application 60/601061, filed on Aug. 11, 2004. | ||
| Claims priority of provisional application 60/577077, filed on Jun. 04, 2004. | ||
| Prior Publication US 2006/0286785 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 29/72 (2006.01) | ||
| U.S. Cl. 438—118 [438/149; 438/455; 438/457; 438/479; 438/584; 257/9; 257/40; 257/619; 439/67] | 36 Claims |
| 1. A method for making a stretchable semiconductor element, said method comprising the steps of:
providing a transferable single crystalline semiconductor structure having a surface;
providing a prestrained elastic substrate in an expanded state, wherein said elastic substrate has an external surface;
printing said transferable single crystalline semiconductor structure to said external surface of said prestrained elastic
substrate; thereby continuously bonding said surface of said transferable single crystalline semiconductor structure to said
external surface of said prestrained elastic substrate in the expanded state; and
allowing said prestrained elastic substrate to at least partially relax to a relaxed state, wherein relaxation of the prestrained
elastic substrate generates a force that bends said single crystalline semiconductor structure continuously bonded to said
prestrained elastic substrate, thereby generating said stretchable semiconductor element.
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