| US 7,518,914 B2 | ||
| Non-volatile memory device with both single and multiple level cells | ||
| Jin-Man Han, Santa Clara, Calif. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Aug. 07, 2006, as Appl. No. 11/500,153. | ||
| Prior Publication US 2008/0031041 A1, Feb. 07, 2008 | ||
| Int. Cl. G11C 11/34 (2006.01) | ||
| U.S. Cl. 365—185.05 [365/185.03; 365/63] | 21 Claims |
| 1. A non-volatile memory device comprising:
a memory array comprising a plurality of memory cells arranged in rows and columns such that the rows are each coupled to
a word line and the columns are serial strings of memory cells that are each coupled to a bit line, the memory cells of each
serial string alternating between single level cells and multilevel cells.
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