| US 7,518,207 B1 | ||
| Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films | ||
| Yuanping Chen, North Potomac, Md. (US); Gregory Brill, Germantown, Md. (US); and Nibir K. Dhar, Herndon, Va. (US) | ||
| Assigned to The United States of America as represented by the Secretary of the Navy, Washington, D.C. (US) | ||
| Filed on Mar. 19, 2004, as Appl. No. 10/807,714. | ||
| Int. Cl. H01L 31/00 (2006.01) | ||
| U.S. Cl. 257—442 [257/614; 257/E31.015] | 13 Claims |
| 1. A multilayer structure for use in a device for detection of microwave, millimeter, infrared (IR), ultraviolet, X-ray or
gamma radiation comprising:
a silicon based substrate; and
an epitaxial Cd1-zZnzXxX′1-x film grown on the silicon based substrate by molecular beam epitaxy from multiple material sources where the flux of each
of the multiple material sources is controlled under a given set of epitaxial growth conditions including temperature, where
X is a chalcogenide selected from the group consisting of S and Se; X′ is a higher atomic number chalcogenide relative to
X and X′ is selected from the group consisting of S, Se and Te; x is a number greater than zero and less than or equal to
0.097; and z is a number greater than or equal to 0.003 and less than or equal to 0.02, such that x+z is a value less than
or equal to 0.10;
a radiation sensing Hg1-yCdyTe layer grown on the Cd1-zZnzXxZ′1-x film, the Hg1-yCdyTe layer being substantially lattice matched to the Cd1-zZnzXxX′1-x film, where y is a number between 0.15 and 0.35 such that the effects of any mismatch are insignificant to device performance
and the surface defect density is less than 500 per centimeter squared.
|