| US 7,518,185 B2 | ||
| Semiconductor component and method of manufacturing | ||
| Peyman Hadizad, Scottsdale, Ariz. (US); Jina Shumate, Phoenix, Ariz. (US); and Ali Salih, Mesa, Ariz. (US) | ||
| Assigned to Semiconductor Components Industries, L.L.C., Phoenix, Ariz. (US) | ||
| Filed on Jan. 30, 2007, as Appl. No. 11/668,872. | ||
| Application 11/668872 is a division of application No. 10/842393, filed on May 10, 2004, granted, now 7,205,605. | ||
| Application 10/842393 is a division of application No. 09/802726, filed on Mar. 12, 2001, granted, now 6,756,273. | ||
| Prior Publication US 2008/0006874 A1, Jan. 10, 2008 | ||
| Int. Cl. H01L 29/76 (2006.01) | ||
| U.S. Cl. 257—330 [257/E29.118] | 20 Claims |
| 17. A semiconductor component comprising:
a semiconductor layer of a first conductivity type having a first charge density, a first surface formed with first and second
trenches, and a channel region formed adjacent the first trench;
a control electrode in the first trench;
an electrically insulative layer in the first trench between the semiconductor layer and the control electrode;
a first region having a second conductivity type and a second charge density balancing the first charge density to form a
superjunction structure, and having a first portion at a first side of the first trench and adjoining a sidewall of the second
trench;
a drain region disposed adjacent to the first trench and the first region, wherein the drain region has the first conductivity
type and a charge density greater than the first and second charge densities, and wherein the first region is disposed between
the channel region and the drain region, and wherein the first region extends along a height of the semiconductor layer from
the drain region toward the first surface;
a source region of the first conductivity type disposed in the channel region between the first and second trenches; and
an electrically conductive layer making contact to the source region at the first surface and within the second trench.
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