| US 7,518,172 B2 | ||
| Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same | ||
| Chang-rok Moon, Seocho-gu (Korea, Republic of); Yun-hee Lee, Yongin-si (Korea, Republic of); Jong-wan Jung, Hwaseong-si (Korea, Republic of); and Byung-jun Park, Suwon-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Jan. 30, 2007, as Appl. No. 11/699,477. | ||
| Claims priority of application No. 10-2006-0009372 (KR), filed on Jan. 31, 2006. | ||
| Prior Publication US 2007/0194356 A1, Aug. 23, 2007 | ||
| Int. Cl. H01L 31/062 (2006.01) | ||
| U.S. Cl. 257—292 [257/446] | 23 Claims |
| 1. An image sensor comprising:
a first isolation region formed in a substrate;
a second isolation region formed with a depth less than a depth of the first isolation region;
a plurality of photoelectric transducer devices isolated from one another by the first isolation region; and
a read element and a floating diffusion region isolated from the photoelectric transducer devices by the second isolation
region.
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