| US 7,518,171 B2 | ||
| Photo diode and related method for fabrication | ||
| Jhy-Jyi Sze, Tai-Nan (Taiwan); Ming-Yi Wang, Taipei Hsien (Taiwan); and Junbo Chen, Tai-Chung Hsien (Taiwan) | ||
| Assigned to United Microelectronics Corp., Hsin-Chu (Taiwan) | ||
| Filed on Apr. 19, 2006, as Appl. No. 11/379,228. | ||
| Prior Publication US 2007/0249077 A1, Oct. 25, 2007 | ||
| Int. Cl. H01L 31/062 (2006.01); H01L 31/113 (2006.01) | ||
| U.S. Cl. 257—292 [257/431; 257/462; 257/288] | 10 Claims |
| 1. A photo diode comprising:
a substrate;
a dielectric layer on the substrate;
a plurality of insulation layers within the substrate;
a doping area in the substrate surrounded by the insulation layers;
a gate on the dielectric layer being on a first side of the doping area;
a poly-silicon section on the dielectric layer being on a second side of the doping area, the second side being different
from the first side;
an opening in the poly-silicon section and the dielectric layer, the opening exposing a surface of the doping area;
a patterned poly-silicon layer in the opening and on part of the poly-silicon section; and
a source or drain on a side of the doping area and in the substrate, the side being different from the first side and the
second side.
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