| US 7,518,153 B2 | ||
| Nitride semiconductor light emitting device | ||
| Manabu Usuda, Osaka (Japan); Tetsuzo Ueda, Osaka (Japan); and Kenji Orita, Osaka (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Jan. 09, 2008, as Appl. No. 11/971,467. | ||
| Claims priority of application No. 2007-015303 (JP), filed on Jan. 25, 2007. | ||
| Prior Publication US 2008/0179606 A1, Jul. 31, 2008 | ||
| Int. Cl. H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—94 [257/79] | 11 Claims |
| 1. A nitride semiconductor light emitting device comprising:
a substrate formed of silicon;
an insulating film formed on the substrate;
a single crystal thin film formed on the insulating film; and
a semiconductor laminated body formed on the single crystal thin film and including a light emitting layer formed of nitride
semiconductor,
wherein a thickness of the single crystal thin film is 5 nm or more and 40 nm or less, or 70 nm or more and 90 nm or less,
wherein the single crystal thin film is formed of silicon or silicon carbide.
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