| US 7,518,096 B2 | ||
| Method of designing photoelectric conversion apparatus with carefully set antireflective film thickness | ||
| Tomoyuki Noda, Kanagawa (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Filed on Nov. 15, 2004, as Appl. No. 10/986,945. | ||
| Claims priority of application No. 2003-393978 (JP), filed on Nov. 25, 2003. | ||
| Prior Publication US 2005/0110002 A1, May 26, 2005 | ||
| Int. Cl. H01L 31/00 (2006.01) | ||
| U.S. Cl. 250—214.1 [250/226; 250/208.1; 438/72; 257/437] | 4 Claims |
| 1. A method of designing antireflective films for a photoelectric conversion apparatus that includes a plurality of light
receiving portions, an antireflective film arranged on each of said plurality of light receiving portions, and color filter
layers of a plurality of colors arranged on each of said antireflective films, said method comprising steps of:
determining a thickness range of antireflective films,
wherein a transmittance of a relatively thin antireflective film within said thickness range and a transmittance of a relatively
thick antireflective film within said thickness range has a constant relationship over a range of wavelengths, and
wherein said range of wavelengths includes wavelengths corresponding to a plurality of color filters; and
designing an antireflective film to be used in a photoelectric conversion apparatus based on said thickness range determined
in said determining step.
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