| US 7,489,157 B2 | ||
| System and method for automatically measuring carrier density distribution by using capacitance-voltage characteristics of a MOS transistor device | ||
| Chang Soo Jang, Seoul (Korea, Republic of) | ||
| Assigned to Dongbu Electronics Co., Ltd., Seoul (Korea, Republic of) | ||
| Filed on Dec. 28, 2006, as Appl. No. 11/646,462. | ||
| Claims priority of application No. 10-2005-0133540 (KR), filed on Dec. 29, 2005. | ||
| Prior Publication US 2007/0152699 A1, Jul. 05, 2007 | ||
| Int. Cl. G01R 31/26 (2006.01); G01R 31/28 (2006.01) | ||
| U.S. Cl. 324—769 [324/765; 324/158.1] | 9 Claims |
| 1. A system for automatically measuring carrier density distribution by using capacitance-voltage characteristics of a MOS
transistor device, comprising:
an automatic probe station for measurement of an object wafer, the automatic probe station being electrically connected to
the wafer;
a capacitor measuring unit separately having a high frequency terminal and a low frequency terminal; and
a control computer connected to both the automatic probe station and the capacitor measuring unit,
wherein the control computer is directly connected to the automatic probe station, and
wherein the high frequency terminal is connected to a gate of the wafer and the low frequency terminal is connected to a substrate
of the wafer.
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