| US 7,488,959 B2 | ||
| Apparatus and method for partial ion implantation | ||
| Yong Soo Jung, Seoul (Korea, Republic of); Seung Woo Jin, Icheon-si (Korea, Republic of); Min Yong Lee, Seoul (Korea, Republic of); and Kyoung Bong Rouh, Goyang-si (Korea, Republic of) | ||
| Assigned to Hynix Semiconductor Inc., Icheon-si (Korea, Republic of) | ||
| Filed on Jun. 09, 2006, as Appl. No. 11/423,306. | ||
| Claims priority of application No. 10-2006-0013806 (KR), filed on Feb. 13, 2006. | ||
| Prior Publication US 2007/0187620 A1, Aug. 16, 2007 | ||
| Int. Cl. H01J 37/20 (2006.01) | ||
| U.S. Cl. 250—492.21 [250/442.11] | 16 Claims |
| 1. An apparatus for partial ion implantation, the apparatus comprising:
a wafer support;
an ion beam irradiator capable of generating and irradiating an ion beam entering a wafer; and
an ion beam exposure adjustor for adjusting exposure of the wafer with respect to the ion beam according to regions of the
wafer by setting an exposure opening via combination of ion beam shields for blocking the ion beam, the exposure opening enabling
the wafer to be partially exposed to the ion beam irradiated therethrough,
said ion beam exposure adjustor comprising a shield-combining part to move and combine the ion beam shields so as to allow
variation in size and position of the exposure opening with respect to the wafer.
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