| US 7,488,614 B2 | ||
| Providing a charge dissipation structure for an electrostatically driven device | ||
| Susanne Arney, Highland Park, N.J. (US); Arman Gasparyan, New Providence, N.J. (US); Sungho Jin, San Diego, Calif. (US); Omar D. López, Summit, N.J. (US); and Herbert R. Shea, Washington Township, Bergen County, N.J. (US) | ||
| Assigned to Alcatel-Lucent USA Inc., Murray Hill, N.J. (US); and Agere Systems Inc., Allentown, Pa. (US) | ||
| Filed on Apr. 25, 2005, as Appl. No. 11/113,782. | ||
| Application 11/113782 is a division of application No. 10/323522, filed on Dec. 18, 2002, granted, now 6,944,008. | ||
| Prior Publication US 2005/0196891 A1, Sep. 08, 2005 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—48 [438/52] | 23 Claims |
| 1. A method of fabricating a device, comprising:
(A) disposing at least one electrode on a surface of a first portion of a dielectric, wherein the first portion and the at
least one electrode form an electrode region of the device; and
(B) forming a charge-dissipation structure in the electrode region and in a second portion of the dielectric located outside
of the electrode region, wherein:
said forming the charge-dissipation structure comprises implanting ions into the electrode region and the second portion;
and
the implanting into the electrode region and the second portion is performed before the at least one electrode is disposed;
and
forming the charge-dissipation structure further comprises implanting ions into the at least one electrode.
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