| US 7,483,295 B2 | ||
| MTJ sensor including domain stable free layer | ||
| Yimin Guo, Milpitas, Calif. (US); and Po-Kang Wang, Milpitas, Calif. (US) | ||
| Assigned to Mag IC Technologies, Inc., Milpitas, Calif. (US) | ||
| Filed on Apr. 23, 2007, as Appl. No. 11/788,912. | ||
| Prior Publication US 2008/0258721 A1, Oct. 23, 2008 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—171 [365/173] | 16 Claims |
| 1. A magnetic field sensor having a domain stable free layer, comprising:
an array of magneto-resistive elements on a conductive substrate, each of said magneto-resistive elements having a width dimension
along a first axis and a length dimension along a second axis with a length-to-width ratio of at least 1.2, said length dimension
being at most 1.0 micron;
each of said magneto-resistive elements further comprising a magnetic reference layer having a fixed magnetization whose direction
is along said first axis;
a magnetic free layer having uniaxal anisotropy along said second axis; and
a separation layer between said magnetic reference layer and said magnetic free layer.
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