| US 7,482,892 B2 | ||
| Traveling wave switch having FET-integrated CPW line structure | ||
| Zuo-Min Tsai, Taipei (Taiwan); Mei-Chao Yeh, Taipei (Taiwan); and Huei Wang, Taipei (Taiwan) | ||
| Assigned to National Taiwan University, Taipei (Taiwan) | ||
| Filed on Mar. 18, 2006, as Appl. No. 11/276,952. | ||
| Prior Publication US 2007/0216501 A1, Sep. 20, 2007 | ||
| Int. Cl. H01P 1/15 (2006.01) | ||
| U.S. Cl. 333—103 [333/262] | 8 Claims |
| 1. A traveling wave switch comprising:
a coplanar waveguide line structure formed by a first metal layer, a second metal layer, and a signal line, providing a switching
channel for signals passing through the traveling wave switch; and
a field effect transistor composed of a gate, a drain, and a source, wherein the drain is electrically connected to the signal
line, and the signal line directly passes through the drain of the field effect transistor, the source is electrically connected
to a ground of the coplanar waveguide line structure, the gate is connected to the first metal layer through an air bridge,
and connected to the gate by passing the ground of the coplanar waveguide line structure through a mesa resistor, and is used
to switch the signals passing through the traveling wave switch;
wherein the ground of the coplanar waveguide line structure is the second metal layer.
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