US 7,481,949 B2
Polishing composition and rinsing composition
Akihiro Kawase, Kasugai (Japan); Toshihiro Miwa, Aichi (Japan); Kenji Sakamoto, Gifu (Japan); and Ichiro Hayashida, Iruma (Japan)
Assigned to Wako Pure Chemical Industries, Ltd, Osaka (Japan)
Appl. No. 10/533,888
PCT Filed Nov. 07, 2003, PCT No. PCT/JP03/14224
§ 371(c)(1), (2), (4) Date Dec. 21, 2005,
PCT Pub. No. WO2004/042812, PCT Pub. Date May 21, 2004.
Claims priority of application No. 2002-325220 (JP), filed on Nov. 08, 2002.
Prior Publication US 2006/0151854 A1, Jul. 13, 2006
Int. Cl. C09K 13/00 (2006.01); H01L 21/302 (2006.01)
U.S. Cl. 252—79.1  [252/79.4; 252/79.5; 438/692; 438/693] 17 Claims
OG exemplary drawing
 
1. A polishing composition for use in polishing a silicon wafer, the polishing composition consisting of a chelating agent, an alkali compound, silicon dioxide and water, wherein the chelating agent is an acid represented by the following chemical formula:

OG Complex Work Unit Drawing
or a salt thereof, and wherein in the chemical formula, each of Y2 and Y3 represents an Alkylene group, n is an integer of 0 to 4,

OG Complex Work Unit Drawing
is a bond when n is zero,each of 4+n substituents represented by R8 to R12 is an alkyl group and at least four of the alkyl groups have a phosphonic acid group.