| US 7,474,394 B2 | ||
| Apparatus of inspecting defect in semiconductor and method of the same | ||
| Akira Hamamatsu, Yokohama (Japan); Shunji Maeda, Yokohama (Japan); and Hisae Shibuya, Chigasaki (Japan) | ||
| Assigned to Hitachi High-Technologies Corporation, Tokyo (Japan) | ||
| Filed on Jul. 19, 2006, as Appl. No. 11/488,622. | ||
| Claims priority of application No. 2005-209384 (JP), filed on Jul. 20, 2005. | ||
| Prior Publication US 2007/0019185 A1, Jan. 25, 2007 | ||
| Int. Cl. G01N 21/88 (2006.01) | ||
| U.S. Cl. 356—237.2 [356/237.1; 356/237.4; 250/559.41] | 13 Claims |
| 1. A defect inspection apparatus comprising:
an illumination unit for illuminating light to an object to be inspected,
a detection unit for detecting scattering light from the object to be inspected,
a signal processing unit for detecting a defect by processing a detection signal of the scattering light detected by the detection
unit, and calculating size of the defect detected by the defect detection unit,
a size correction unit for correcting the size of the defect calculated by the size measuring unit depending on separately
obtained information of feature quantity or type of the defect, and
a display unit for displaying information of a result processed by the signal processing unit,
wherein said signal processing unit further calibrating the size of the defect calculated by the calculating, by using a relationship
between a size of a defect whose size is known and a size of the defect detected by the detecting unit and calculated by the
signal processing unit.
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