| US 7,474,045 B2 | ||
| Display device having TFT with radiation-absorbing film | ||
| Takashi Hamada, Kanagawa (Japan); Masahiko Hayakawa, Kanagawa (Japan); and Shunpei Yamazaki, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on May 02, 2003, as Appl. No. 10/428,014. | ||
| Claims priority of application No. 2002-143893 (JP), filed on May 17, 2002; and application No. 2002-173377 (JP), filed on Jun. 13, 2002. | ||
| Prior Publication US 2004/0004430 A1, Jan. 08, 2004 | ||
| Int. Cl. H01J 63/04 (2006.01); H01J 1/62 (2006.01) | ||
| U.S. Cl. 313—498 [313/503; 313/504; 313/505; 313/506; 428/690; 428/917; 257/40] | 42 Claims |
| 1. A display apparatus comprising:
a transistor over a substrate; and
a light-emitting device electrically connected to the transistor,
wherein the transistor comprises a conductive film having iron, and an electric potential of the conductive film is fixed,
wherein the conductive film is comprised in a gate wiring of the transistor, and
wherein a width of the conductive film is longer than a channel length of a channel forming region of the transistor.
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