| US 7,473,927 B2 | ||
| Thin film transistors array and pixel structure | ||
| Han-Chung Lai, Taoyuan County (Taiwan) | ||
| Assigned to AU Optronics Corporation, Hsinchu (Taiwan) | ||
| Filed on Dec. 02, 2004, as Appl. No. 10/904,875. | ||
| Claims priority of application No. 93125452 A (TW), filed on Aug. 26, 2004. | ||
| Prior Publication US 2006/0043370 A1, Mar. 02, 2006 | ||
| Int. Cl. H01L 31/112 (2006.01) | ||
| U.S. Cl. 257—71 [257/59] | 5 Claims |
| 1. A pixel structure electrically connected to a scan line and a data line, comprising:
a substrate;
a first capacitor electrode disposed on the substrate;
a capacitor dielectric layer disposed on the first capacitor electrode;
a second capacitor electrode disposed on the capacitor dielectric layer, wherein the second capacitor electrode has a protrusion
protruding beyond the edge of the first capacitor electrode;
a passivation layer, disposed on the second capacitor electrode, having an opening that exposes the second capacitor electrode;
and
a pixel electrode disposed on the passivation layer and electrically connected to the second capacitor electrode through the
opening in the passivation layer, wherein the protrusion protrudes beyond the edge of the pixel electrode, the pixel electrode
has at least a slit formed therein, the slit extends inward from the edge of the pixel electrode, the slit has an end portion
near the scan line, and the end portion is completely shielded by the protrusion of the second capacitor electrode.
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