| US 7,473,644 B2 | ||
| Method for forming controlled geometry hardmasks including subresolution elements | ||
| Richard H. Lane, Boise, Id. (US); and Fred Fishburn, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jul. 01, 2004, as Appl. No. 10/883,215. | ||
| Prior Publication US 2006/0003182 A1, Jan. 05, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—688 [438/689; 257/E21.024; 257/E21.023] | 46 Claims |
| 1. A method for forming hardmask elements on a substrate comprising:
forming a first material layer on a substrate;
forming a second material layer on the first material layer;
forming a plurality of laterally-spaced, discrete structures comprising the first and second material layers on the substrate
and leaving intervening portions of the substrate exposed, the plurality of laterally-spaced, discrete structures each having
a geometry defined by a top surface and substantially vertical sidewalls;
depositing a hardmask material layer over the top surfaces and sidewalls of the plurality of laterally-spaced, discrete structures
and the intervening, exposed portions of the substrate;
removing portions of the hardmask material layer over the top surfaces of the laterally-spaced, discrete structures and the
intervening portions of the substrate while leaving spacers of the hardmask material layer on the sidewalls of the laterally-spaced,
discrete structures;
planarizing the plurality of laterally-spaced, discrete structures to remove all of the second material layer and adjacent
portions of the spacers; and
removing the first material layer to form a plurality of hardmask elements.
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