| US 7,473,642 B2 | ||
| Method for fabricating conductive layer | ||
| Hsien-Kun Chiu, Taoyuan County (Taiwan); Chin-Chuan Lai, Taoyuan County (Taiwan); Yi-Pen Lin, Taoyuan County (Taiwan); and Shu-Chen Yang, Tainan County (Taiwan) | ||
| Assigned to Chunghwa Picture Tubes, Ltd., Taoyuan (Taiwan) | ||
| Filed on Jun. 12, 2007, as Appl. No. 11/761,374. | ||
| Claims priority of application No. 96109701 A (TW), filed on Mar. 21, 2007. | ||
| Prior Publication US 2008/0233739 A1, Sep. 25, 2008 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—678 [438/613; 438/679; 257/762; 257/443; 257/750; 257/766; 349/38; 349/43] | 9 Claims |
| 1. A method for fabricating a conductive layer suitable for fabrication of thin film transistors, comprising:
providing a substrate;
forming a patterned adhesion layer on the substrate, wherein the method for fabricating the patterned adhesion layer comprises:
forming a material layer on the substrate;
forming a patterned photoresist layer on the material layer;
patterning the material layer to form the patterned adhesion layer using the patterned photoresist layer as a mask;
performing a hard bake process on the patterned photoresist layer and the patterned adhesion layer; and
removing the patterned photoresist layer;
performing a chemical plating process by placing the substrate in an electroplating solution to form a first metal layer on
the patterned adhesion layer; and
performing a plating process to form a second metal layer on the first metal layer.
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