| US 7,473,624 B2 | ||
| Method for manufacturing semiconductor device | ||
| Masakatsu Hamaji, Kawasaki (Japan) | ||
| Assigned to NEC Electronics Corporation, Kanagawa (Japan) | ||
| Filed on Mar. 14, 2005, as Appl. No. 11/78,401. | ||
| Claims priority of application No. 2004-073864 (JP), filed on Mar. 16, 2004. | ||
| Prior Publication US 2005/0208743 A1, Sep. 22, 2005 | ||
| Int. Cl. H01L 21/3205 (2006.01); H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—587 [438/617; 438/689] | 3 Claims |
| 1. A method for manufacturing a semiconductor device, comprising manufacturing the semiconductor device by forming a wiring
based on circuit data of a basic cell including a transistor formed by employing a reticle having a predetermined pattern,
comprising;
forming a conductive film over a semiconductor insulator; and
patterning said conductive film by employing a reticle having a predetermined first gate pattern for forming a gate electrode
of said basic cell and a second gate pattern for forming a capacitor element in said basic cell.
|