| US 7,473,609 B2 | ||
| Surface treatment in preparation for contact placement | ||
| Martin W. Dvorak, Santa Rosa, Calif. (US); Timothy C. Engel, Windsor, Calif. (US); Ronald J. Miller, Sebastopol, Calif. (US); and Scott D. Lafrancois, Rohnert Park, Calif. (US) | ||
| Assigned to Agilent Technologies, Inc., Santa Clara, Calif. (US) | ||
| Filed on Mar. 29, 2005, as Appl. No. 11/93,113. | ||
| Prior Publication US 2006/0223273 A1, Oct. 05, 2006 | ||
| Int. Cl. H01L 21/331 (2006.01) | ||
| U.S. Cl. 438—309 [438/597; 438/604; 257/E27.037] | 16 Claims |
| 1. A method for forming a contact on indium-phosphide material, comprising:
exposing regions of the indium-phosphide material;
performing an energetic bombardment of exposed regions of the indium-phosphide material; and,
depositing metal on the exposed regions of the indium-phosphide material where energetic bombardment occurred;
wherein the metal is deposited in an in situ process performed immediately following the energetic bombardment.
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