| US 7,473,570 B2 | ||
| Method for forming epitaxial layers of gallium nitride-based compound semiconductors | ||
| Mu-Jen Lai, Chungli (Taiwan) | ||
| Assigned to Supernova Optoelectronics Corporation, Taoyuan County (Taiwan) | ||
| Filed on May 26, 2006, as Appl. No. 11/441,036. | ||
| Claims priority of application No. 95116058 A (TW), filed on May 05, 2006. | ||
| Prior Publication US 2007/0272943 A1, Nov. 29, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/28 (2006.01) | ||
| U.S. Cl. 438—45 [438/46; 438/602; 438/604; 257/E33.023] | 5 Claims |
| 1. A method for forming epitaxial layers of gallium nitride-based compound semiconductors, comprising the steps of:
providing a substrate;
surface treating the substrate using reaction precursors Cp2Mg and NH3 to form the magnesium nitride layer thereon;
lowering the reaction temperature and forming a low-temperature gallium nitride-based buffer layer; and
forming a high-temperature gallium nitride-based buffer layer on the low-temperature gallium nitride-based buffer layer.
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