| US 7,473,314 B2 | ||
| Method for growing silicon single crystal | ||
| Shuichi Inami, Tokyo (Japan); Nobumitsu Takase, Tokyo (Japan); Yasuhiro Kogure, Tokyo (Japan); Ken Hamada, Tokyo (Japan); and Tsuyoshi Nakamura, Tokyo (Japan) | ||
| Assigned to Sumco Corporation, Tokyo (Japan) | ||
| Filed on Mar. 28, 2006, as Appl. No. 11/390,366. | ||
| Claims priority of provisional application 60/693944, filed on Jun. 27, 2005. | ||
| Claims priority of application No. 2005-179995 (JP), filed on Jun. 20, 2005. | ||
| Prior Publication US 2006/0283373 A1, Dec. 21, 2006 | ||
| Int. Cl. C30B 15/20 (2006.01) | ||
| U.S. Cl. 117—20 [117/13; 117/19; 117/932] | 8 Claims |
| 1. A method for growing a silicon single crystal according to the Czochralski method, comprising:
applying a thermal stress to at least a portion of the silicon single crystal during crystal growth, and
using a gaseous substance containing hydrogen atoms as an atmospheric gas for growing the crystal,
wherein the thermal stress comprises 30 MPa or more.
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